Abstract:The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. Keywords Amorphous silicon, Grazing incidence X-rays, Hydrogen, Optical properties, Penetration depth, Reflectometry, Thermal annealing, Thin films. PACS Numbers 61.10.K - 61.43.D - <a class="link-external link-http" href="http://68.55.JK" rel="external noopener nofollow">this http URL</a> - 68.55.81.15.A

Effect of Technical Parameter on Optical Constants of Amorphous Silicon Thin Film

Properties of plasma-deposited amorphous SiO2 films

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Determination of the Optical Constants of Solar-Control Amorphous Silicon Thin Films on Float Glass

On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

Effects of hydrogen pressure on hydrogenated amorphous silicon thin films prepared by low-temperature reactive pulsed laser deposition

Effect of gas temperature on the structural and optoelectronic properties of a-Si: H thin films deposited by PECVD

Modification on Forouhi and Bloomer Model for the Optical Properties of Amorphous Silicon Thin Films

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H