Abstract:Semiconductor manufacturing depends on the development of new processes, advanced patterning, and novel materials to create smaller and higher performing devices to follow the industry roadmaps for applications for computing and systems (such as smartphones and servers). For dynamic random access memory (DRAM) applications, the biggest efforts are engaged in scaling and shrinking of the nodes, and these then affect the area density, performance, and cost of the DRAM cells. However, while we are reaching a slowdown in dimension-scaling, more innovation is needed to sustain the high aspect ratios required in the capacitor’s architecture—whether it is moving toward 3D architectures or developing new materials to sustain the challenge of scaling. To accelerate the learning, it is essential to screen novel hard mask (HM) materials in a rapid fashion to speed their development. While EUV (extreme ultraviolet—a wavelength of 13.5 nm) lithography requires 300 mm wafers, electron beam lithography (EBL) generates nanoscale patterns in a maskless manner on smaller substrates (from 300 mm wafers to 10 mm2 coupons) mimicking sub-50 nm EUV features. The primary goal of this work is to create a path for rapid screening of HM materials that are still under early phase development and which are prepared in small chamber tools (coupon chambers) and, therefore, not ready for 300 mm process integration. While the features investigated of 44 nm half pitch seem extremely reasonable for e-beam, the requirements and the approaches used to address the needed patterned area, resolution, speed, and uniformity exceed the standard conditions previously reported in the literature. Each aspect will be evaluated in the context of a “dots on the fly,” or DOTF, patterning technique.

Investigation and Prediction of Image Placement Errors in Extreme Ultraviolet Lithography Masks

Theoretical and numerical analysis of EUV lithography mask blank fabrication

Simulation and pattern distortion analysis of UV-LIGA based on the partial coherent light theory

Analysis and compensation of shape distortion in UV-LIGA based on partial coherent light theory

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Mask innovations on the eve of High NA EUV lithography

EUV Multilayer Defect Characterization Via Cycle-Consistent Learning

Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis

Optimization of partial photo mask based on wave-front division theory in proximity lithography

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Lithography printability review: an application on advanced photomask production for enhancing mask yield and cycle time

Improved ptychographic inspection of EUV reticles via inclusion of prior information

Mask structure optimization for beyond EUV lithography

Pushing Multiple Patterning in Sub-10Nm: Are We Ready?

Analysis of Effective Wave-Front Affecting Diffraction Field in Proximity Lithography

Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

A New Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement with Attenuated Phase Shift Mask

A Study of the Advantages to the Photolithography Process Brought by the High NA EUV Exposure Tool in Advanced Logic Design Rules