EUV Multilayer Defect Characterization Via Cycle-Consistent Learning

Ying Chen,Yibo Lin,Rui Chen,Lisong Dong,Ruixuan Wu,Tianyang Gai,Le Ma,Yajuan Su,Yayi Wei
DOI: https://doi.org/10.1364/oe.394590
IF: 3.8
2020-01-01
Optics Express
Abstract:Extreme ultraviolet (EUV) lithography mask defects may cause severe reflectivity deformation and phase shift in advanced nodes, especially like multilayer defects. Geometric parameter characterization is essential for mask defect compensation or repair. In this paper, we propose a machine learning framework to predict the geometric parameters of multilayer defects on EUV mask blanks. With the proposed inception modules and cycle-consistent learning techniques, the framework enables a novel way of defect characterization with high accuracy.
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