[Relationship between digoxin dosage and serum concentration].

M. Mittelman,U. Lewinski,J. Perek,A. Eisbruch

1984-08-01

Abstract:

What problem does this paper attempt to address?

Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation

Yifeng Shao,Sven Weerdenburg,Jacob Seifert,H. Paul Urbach,Allard P. Mosk,Wim Coene

DOI: https://doi.org/10.1038/s41377-024-01558-3

2024-08-19

Light Science & Applications

Abstract:Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next generationmetrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the nanoscale. This technique has surged attention recently, owing to the significant progress in high-harmonic generation (HHG) EUV sources and advancements in both hardware and software for computation. In this study, a novel algorithm is introduced and tested, which enables wavelength-multiplexed reconstruction that enhances the measurement throughput and introduces data diversity, allowing the accurate characterisation of sample structures. To tackle the inherent instabilities of the HHG source, a modal approach was adopted, which represents the cross-density function of the illumination by a series of mutually incoherent and independent spatial modes. The proposed algorithm was implemented on a mainstream machine learning platform, which leverages automatic differentiation to manage the drastic growth in model complexity and expedites the computation using GPU acceleration. By optimising over 200 million parameters, we demonstrate the algorithm's capacity to accommodate experimental uncertainties and achieve a resolution approaching the diffraction limit in reflection geometry. The reconstruction of wafer samples with 20-nm high patterned gold structures on a silicon substrate highlights our ability to handle complex physical interrelations involving a multitude of parameters. These results establish ptychography as an efficient and accurate metrology tool.

optics
Wavelength-multiplexed Multi-mode EUV Reflection Ptychography based on Automatic-Differentiation

Yifeng Shao,Sven Weerdenburg,Jacob Seifert,H. Paul Urbach,Allard P. Mosk,Wim Coene

2023-11-25

Abstract:Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next-generation metrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the nanoscale. This technique has surged attention recently, owing to the significant progress in high-harmonic generation (HHG) EUV sources and advancements in both hardware and software for computation. In this study, a novel algorithm is introduced and tested, which enables wavelength-multiplexed reconstruction that enhances the measurement throughput and introduces data diversity, allowing the accurate characterisation of sample structures. To tackle the inherent instabilities of the HHG source, a modal approach was adopted, which represents the cross-density function of the illumination by a series of mutually incoherent and independent spatial modes. The proposed algorithm was implemented on a mainstream machine learning platform, which leverages automatic differentiation to manage the drastic growth in model complexity and expedites the computation using GPU acceleration. By optimising over 200 million parameters, we demonstrate the algorithm's capacity to accommodate experimental uncertainties and achieve a resolution approaching the diffraction limit in reflection geometry. The reconstruction of wafer samples with 20-nm heigh patterned gold structures on a silicon substrate highlights our ability to handle complex physical interrelations involving a multitude of parameters. These results establish ptychography as an efficient and accurate metrology tool.

Image and Video Processing,Optics
A Positional Misalignment Correction Method for Fourier Ptychographic Microscopy Based on the Quasi-Newton Method with a Global Optimization Module

Jinlei Zhang,Xiao Tao,Peng Sun,Zhenrong Zheng

DOI: https://doi.org/10.1016/j.optcom.2019.07.046

IF: 2.4

2019-01-01

Optics Communications

Abstract:Fourier ptychographic microscopy (FPM) can achieve high resolution imaging with a wide field-of-view, in which, the position of the LED sources determines the quality of the reconstructed image. In this paper, a positional misalignment correction method, which is based on the quasi-Newton method combined with a global optimization module, is proposed to recover a high quality and high-resolution image with positional error of the LED sources. In the method, the global optimization module optimizes the LED position at first, which gives the quasi-Newton method a better initial position estimate. Simulation and experiment have been performed to verify the effectiveness of the proposed method. The results show that, compared with state-of-the-art positional misalignment correction algorithms, the method achieves better reconstruction quality and makes the reconstruction process converge faster and more stable. The proposed method has also been proven to have great potential for correcting large random positional misalignment.
Correction Algorithms of Pupil Aberration for Fourier Ptychographic Microscopy

Minli Chen,Zhaofeng Cen,Xiaotong Li

DOI: https://doi.org/10.1117/12.2501104

2018-01-01

Abstract:Fourier ptychographic microscopy (FPM) is a newly developed imaging approach for achieving wide field and high resolution. However, image quality will degraded by the pupil aberration because of the limitation of geometrical optics. In this paper, two correction algorithms of pupil aberration combining original FPM algorithm with ptychographical iterative engine (PIE) are presented and justified. And the standard coefficients of Zernike polynomial are applied for constructing the pupil aberration in the simulation. Compared to original FPM algorithm, these algorithms add constraints to the sample and the pupil during each iteration, so that the image can be reconstructed and the pupil function can be recovered simultaneously. Furthermore, we illustrate that these algorithms can not only improve robustness, but also have faster convergence under different aberrations.
Optimizing Sub-resolution Assist Features Using Test Pattern Method

Kun Luo

2012-01-01

Abstract:In the field of sub-wavelength lithography,the rule-based sub-resolution assist features insertion is an important technology.Regardless of optical proximity correction effect,the conventional method needs experience to better SRAF.A new optimizing SRAF method using test patterns is presented.Combined with conventional optical proximity correction flow,it can solve problems such as small process window and SRAF print-out.Edge placement error(EPE) and process window are measured and tested on the standard benchmark circuits.The EPE has decreased 10%,while all EPEs under different process windows have also bettered.
Mask innovations on the eve of High NA EUV lithography

Vicky Philipsen,Andreas Frommhold,Devesh Thakare,Guillaume Libeert,Inhwan Lee,Joern-Holger Franke,Joost Bekaert,Lieve Van Look,Nick Pellens,Peter De Bisschop,Rik Jonckheere,Tatiana Kovalevich,Vincent Wiaux,Eric Hendrickx

DOI: https://doi.org/10.35848/1347-4065/ad38c7

IF: 1.5

2024-03-28

Japanese Journal of Applied Physics

Abstract:Abstract We are on the eve of the next big step in lithography technology with the introduction of High numerical aperture EUV. The change from NA 0.33 to 0.55 in EUV lithography is an increase of 67%, which is the largest jump in the last decades, and puts tight requirements on focus and edge placement. Moreover, the lithography system has changed from fully isomorphic, i.e., same demagnification in all directions, to an anamorphic system, i.e., the demagnification in scan direction has doubled with respect to the slit direction. At imec we are fostering the ecosystem surrounding the lithography tool. In this paper we focus on the imaging and mask innovations supporting the EUV ecosystem, which are categorized into four areas: novel absorber masks, stitching, mask variability, and innovative imaging solutions. The current drivers of IC manufacturers implementing (High NA) EUVL are reduction of the EUV exposure dose and decrease in wafer stochastics. We discuss how these four areas have the potential to deliver in EUVL an increase in productivity, an improvement in the process window and a reduction in stochasticity at wafer level.

physics, applied
Mitigating tilt-induced artifacts in reflection ptychography via optimization of the tilt angles

Sander Senhorst,Yifeng Shao,Sven Weerdenburg,Roland Horsten,Christina Porter,Wim Coene

2024-09-17

Abstract:Ptychography in a reflection geometry shows great promise for non-destructive imaging of 3-dimensional nanostructures at the surface of a thick substrate. A major challenge to obtain high quality reflection-ptychographic images under near-grazing conditions has been to calibrate the incidence angle used to straighten the measured curved diffraction patterns in a process referred to as 'tilted plane correction' (TPC). In this work, we leverage the flexibility of automatic differentiation (AD)-based modeling to realise an alternative approach, where the tilted propagation is included into the forward model. Use of AD allows us to jointly optimize the tilt angles with the typical probe and object, eliminating the need for accurate calibration or random search optimization. The approach was validated using datasets generated with an extreme ultraviolet (EUV) beamline based on either a tabletop high harmonic generation (HHG) source or a visible laser. We demonstrate that the proposed approach can converge to a precision of $\pm 0.05°$ for probe beams at $70°$ angle of incidence, possibly precise enough for use as a calibration approach. Furthermore, we demonstrate that optimizing for the tilt angles reduces artifacts and increases reconstruction fidelity. Use of AD not only streamlines the current ptychographic reconstruction process, but should also enable optimization of more complex models in other domains, which will undoubtedly be essential for future advancements in computational imaging.

Optics
Lithography printability review: an application on advanced photomask production for enhancing mask yield and cycle time

Wenjun Ling,Xuefei Qin,Dejian Li,Fen Xue,Jie Wang,Cong Lu,Mingjing Tian,Ming Chen,Vikram L. Tolani,Gregg A. Inderhees,Alexander Tan,Suo Li,Xiaodi Liu,Wen Jun Ling,Xue Fei Qin,De Jian Li,Xiao Di Liu

DOI: https://doi.org/10.1117/12.2536494

2019-09-26

Abstract:In the advanced technology photomask manufacturing industry, it is challenging to produce defect-free photomasks, especially for the increasingly smaller critical dimension current days . Since the 193nm immersion scanner numerical aperture (1.35) has remained the same as in previous nodes, more mult i-patterning and aggressive source mask optimizat ion illumination sources are being used to print smaller feature crit ical dimensions (CDs) and pitches. To accommodate such specialized sources, more model -based mask OPC and ILT are being used, making mask designs very complicated. This in turn makes mask manufacturing very challenging , especially for the defect inspection, repair, and metrology processes that are used to guarantee defect-free masks. So, it is necessary to develop an application for handling mask defects. In this paper, we introduce a new application called LPR (Lithography Printability Review) to verify any outlier defects or repairs before the mask ships to the wafer fab. The paper details how LPR works in the mask-making flow and how the LPR module is set up. This application has been tightly integrated with KLA’s server and inspectors. The paper concludes with showing the benefits realized in mask making cycle time as a result of implementing LPR into a high volume advanced photomask production line.
Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology

Tsuyoshi Kondo,Naoma Ban,Yasushi Ebizuka,Yasutaka Toyoda,Yukari Yamada,Taeko Kashiwa,Hirohito Koike,Hiroyuki Shindo,Anne-Laure Charley,Mohamed Saib,Frieda Van Roey,Peter De Bisschop,Danilo De Simone,Christophe Beral,Gian F. Lorusso

DOI: https://doi.org/10.1117/12.2583691

2021-02-22

Abstract:As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affects the yield loss, and it is very important to inspect/measure all patterning area of interest on chip for the process verification. In this paper, by combining Area Inspection SEM (AI-SEM) with large Field Of View (FOV) and Die-to-Database-base (D2DB) technologies, we show a comprehensive solution for fast inspection and precise massive CD measurement of EUV characterized features, such as After Development Inspection (ADI) hole pattern, and aperiodic 2D Logic pattern. Also, a big data analysis consisting of multiple CD indices output by AI-SEM, a new process window by multivariable analysis is discussed. Furthermore, Machine Learning (ML) -based inspection and metrology to maximize imaging speed, is also reported.
Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3360669

2010-01-01

Abstract:With the technology node entering 45nm and below and the delay of the EUV lithography, the resolution enhancement techniques (RET) has been considered indispensable to extend the life time of conventional 193nm lithography. Traditional RETs, for example, optical proximity correction (OPC), phase-shifting mask (PSM), inverse lithography technique (ILT) and so on, use a fixed source thus limiting the degrees of freedom during the mask pattern optimization. To overcome the restriction, recently, source and mask co-optimization (SMO) has been proposed as a strong contender in RET. However, SMO is very computationally intensive. To mitigate the issue, we adopt a method which has demonstrated in good effectivity and efficiency in illumination source optimization. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). Moreover, the similar method has been used in mask optimization to form a complete SMO algorithm. The SMO algorithm is demonstrated using two mask patterns with critical dimension (CD) of 45nm, including a periodic array of contact holes and a tri-bar pattern. Both the results showed high image quality have been achieved using our SMO algorithm.
DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Wei Xiong,Min-Chun Tsai,Jinyu Zhang,Zhiping Yu

2007-01-01

Abstract:Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Litho- graphy Technique (ILT) has recently been proposed as an effective RET for sub-wavelength technology. ILT incre- ases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient opti- mization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show that the optimized masks provide good fidelity in patterning. We called our method DIscrete REtiCle Technique, DIRECT.
A high-performance reconstruction method for partially coherent ptychography

Wenhui Xu,Shoucong Ning,Pengju Sheng,Huixiang Lin,Angus I Kirkland,Yong Peng,Fucai Zhang

DOI: https://doi.org/10.48550/arxiv.2406.06640

2024-06-09

Computational Physics

Abstract:Ptychography is now integrated as a tool in mainstream microscopy allowing quantitative and high-resolution imaging capabilities over a wide field of view. However, its ultimate performance is inevitably limited by the available coherent flux when implemented using electrons or laboratory X-ray sources. We present a universal reconstruction algorithm with high tolerance to low coherence for both far-field and near-field ptychography. The approach is practical for partial temporal and spatial coherence and requires no prior knowledge of the source properties. Our initial visible-light and electron data show that the method can dramatically improve the reconstruction quality and accelerate the convergence rate of the reconstruction. The approach also integrates well into existing ptychographic engines. It can also improve mixed-state and numerical monochromatisation methods, requiring a smaller number of coherent modes or lower dimensionality of Krylov subspace while providing more stable and faster convergence. We propose that this approach could have significant impact on ptychography of weakly scattering samples.
Ptychography-based High-Throughput Lensless On-Chip Microscopy Via Incremental Proximal Algorithms

Yue Huang,Shaowei Jiang,Ruihai Wang,Pengming Song,Jian Zhang,Guoan Zheng,Xiangyang Ji,Yongbing Zhang

DOI: https://doi.org/10.1364/oe.442530

IF: 3.8

2021-01-01

Optics Express

Abstract:Ptychography-based lensless on-chip microscopy enables high-throughput imaging by retrieving the missing phase information from intensity measurements. Numerous reconstruction algorithms for ptychography have been proposed, yet only a few incremental algorithms can be extended to lensless on-chip microscopy because of large-scale datasets but limited computational efficiency. In this paper, we propose the use of accelerated proximal gradient methods for blind ptychographic phase retrieval in lensless on-chip microscopy. Incremental gradient approaches are adopted in the reconstruction routine. Our algorithms divide the phase retrieval problem into sub-problems involving the evaluation of proximal operator, stochastic gradient descent, and Wirtinger derivatives. We benchmark the performances of accelerated proximal gradient, extended ptychographic iterative engine, and alternating direction method of multipliers, and discuss their convergence and accuracy in both noisy and noiseless cases. We also validate our algorithms using experimental datasets, where full field of view measurements are captured to recover the high-resolution complex samples. Among these algorithms, accelerated proximal gradient presents the overall best performance regarding accuracy and convergence rate. The proposed methods may find applications in ptychographic reconstruction, especially for cases where a wide field of view and high resolution are desired at the same time.
A Robust Pixel-Based RET Optimization Algorithm Independent of Initial Conditions

Jinyu Zhang,Wei Xiong,Yan Wang,Zhiping Yu,Min-Chun Tsai

DOI: https://doi.org/10.1109/aspdac.2010.5419808

2010-01-01

Abstract:A robust pixel-based optimization algorithm is proposed for mask synthesis of inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. Result shows that the final image fidelity is almost independent of the initial condition. To demonstrate the robustness of the algorithm, six typical desired mask patterns and two mask technologies are applied in mask synthesis optimization using 100 randomly generated initial conditions. The critical dimension (CD) is 60nm and the partial-coherence image system is applied. It is found that the final edge placement error (EPE) and iteration number are quite weakly dependent on the initial conditions. Good final image fidelity can be acquired using arbitrary initial conditions. This algorithm is about several orders of magnitude faster and more effective than other gradient-based algorithm and simulated annealing algorithm.
High-end EUV photomask repairs for 5nm technology and beyond

Horst Schneider,Fan Tu,Laura Ahmels,Bartholomaeus Szafranek,Katharina Gries,Daniel Rhinow,Sebastian Vollmar,Andreas Krugmann,Ralf Schoenberger,Walter Pauls,Andreas Verch,Renzo Capelli,Alice D. Vincenzo,Grizelda Kersteen,Hubertus Marbach,Michael Waldow

DOI: https://doi.org/10.1117/12.2572879

2020-10-06

Abstract:Scaling trends in the semiconductor industry towards smaller technology nodes and feature sizes are continuing and first consumer products manufactured with the help of EUV technology are already on the market. Major industrial players have introduced EUV lithography into their production at the 7nm technology node and with the 5nm node being on its way [1], the amount of EUV lithographic layers is expected to rise significantly and implementation of EUV double patterning is anticipated. These developments lead to more strict technological requirements especially for the corresponding EUV but also for the used high-end DUV photomasks in terms of minimum feature sizes and acceptable Edge Placement Errors (EPE). Moreover, photomask defectivity increases dramatically with shrinking feature sizes. This creates significant challenges to the industry, as in particular the most cost intensive EUV photomasks possess the highest numbers of defects. The current industry standard for high-end photomask repair tools is the MeRiT neXT [2]. To face the upcoming challenges an efficient and reliable way to repair future high-end photomasks is inevitable. A corresponding repair tool must address decreased minimum feature sizes and increased pattern complexity on high-end photomasks. In this paper we present our latest results of high-end EUV repairs carried out on the next generation photomask repair tool MeRiT LE. The tool shows improved system dynamics, makes use of a new electron beam column, which operates at a low electron beam voltage down to 400V and enables the repair of next generation ultra-small defects.
Cefotaxime and ceftriaxone levels in pancreas tissue and pancreatic juice.

I. Pulay,M. Arr,A. Bryskier,L. Flautner,T. Tihanyi,A. Magyar

1989-07-01

Journal of Chemotherapy

Abstract:
Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Yayi Wei,Lisong Dong,Taian Fan,Ling Ma,Xu Ma

DOI: https://doi.org/10.1117/1.JMM.21.4.043204

2022-10-01

Journal of Micro/Nanopatterning, Materials, and Metrology

Abstract:Abstract. Background In advanced technology nodes, forbidden pitches (FPs) can reduce the depth of focus and limit the overlapped process window of lithography. In extreme ultraviolet (EUV) lithography, one pattern in a different orientation or different position of arc slit field will have a different shadowing effect, due to the chief ray angle and azimuthal angle of the incident light. Therefore, it is necessary to mitigate the FP effect of EUV lithography. Aim With the purpose of mitigating the phenomenon of FPs in the arc slit exposure field, we propose an optimization method based on a genetic algorithm (GA). Approach The optimization method is derived from the basic flow of the GA. Three mask parameters are selected as the variables, including the mask bias and the width and position of the assist feature. The cost function is designed to evaluate the process window, normalized image log slope, and contrast of different fields in the arc slit. After multiple iterations, an optimal combination of three variables is obtained. Results The simulation results show that the optimized mask structure given by the proposed method in the arc slit exposure field can improve the process window in the horizontal and vertical orientations, respectively. Conclusions The limitation of FPs to the process window is removed using mask optimization based on the GA. The proposed optimization method has the potential to be an effect candidate for FPs mitigation.

Materials Science,Physics,Engineering
From Computational Lithography to Computational Inspection: Inverse Lithography Technology (ILT) and Inverse Inspection Technology (IIT)

Linyong Pang,Danping Peng,Peter Hu,Dongxue Chen,Tom Cecil,Lin He,Guangming Xiao,Vikram Tolani,Thuc Dam,KiHo Baik,Bob Gleason

DOI: https://doi.org/10.1149/1.3360656

2010-11-23

ECS Transactions

Abstract:For semiconductor manufacturers moving toward advanced technology nodes -32nm, 22nm and below - lithography presents the greatest challenge, because it is fundamentally constrained by basic principles of optical physics. Because no major lithography hardware improvements are expected over the next couple years, Computational Lithography has been recognized by the industry as the key technology needed to drive lithographic performance. This implies not only simultaneous co-optimization of all the lithographic enhancement tricks that have been learned over the years, but that they also be pushed to the limit by powerful computational techniques and systems. Inspection presents another great challenge; Most mask rules are imposed not because of mask manufacturing constraints, but due to limitations of mask inspection tools. In addition, at the most advanced technology nodes, such as 32nm and 22nm, aggressive OPC and Sub-Resolution Assist Features (SRAFs), ILT, and SMO are required. Their use results in significantly increased mask complexity, making mask defect inspection and disposition more challenging than ever. In this paper, a single computational lithography and computational inspection framework based on Level Set Method is presented and explained in non-mathematical language. Results at the 32nm node and below are presented which demonstrate the benefits of Level-Set-Method-based ILT and IIT in design rule optimization, SMO, full-chip correction, and mask inspection.
Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

J. Pomplun,S. Burger,F. Schmidt,F. Scholze,C. Laubis,U. Dersch

DOI: https://doi.org/10.1117/12.793032

2010-11-11

Abstract:Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.

Optics,Computational Physics
Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using A Coarse-Grid-Approximation Level-Set Approach

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3567583

2011-01-01

ECS Transactions

Abstract:Inverse lithography technique, which treats mask synthesis as an inverse problem, has been considered as a strong contender to deal with the 45 nm technology node and beyond. But one problem exists in present pixel based mask synthesis algorithms: to describe mask patterns more accurately and to obtain better image quality, usually need finer grid representation, which results in extremely intensive computations. In this paper, a new method is proposed to mitigate this issue based on level-set method. This method utilizes the coarse-grid-approximation (CGA), which means the mask pattern defined on the fine grids is approximated using a new mask defined on coarse grids. The mask optimization is then performed on coarse girds and the final result is acquired by extracting mask patterns from coarse grids to fine grids. This method is demonstrated using a periodic array of contact holes pattern. Comparing with a gradient based algorithm and the traditional level-set algorithm, this method can provide almost the same image quality, but with over 100X running speed enhancement.

[Relationship between digoxin dosage and serum concentration].

Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation

Wavelength-multiplexed Multi-mode EUV Reflection Ptychography based on Automatic-Differentiation

A Positional Misalignment Correction Method for Fourier Ptychographic Microscopy Based on the Quasi-Newton Method with a Global Optimization Module

Correction Algorithms of Pupil Aberration for Fourier Ptychographic Microscopy

Optimizing Sub-resolution Assist Features Using Test Pattern Method

Mask innovations on the eve of High NA EUV lithography

Mitigating tilt-induced artifacts in reflection ptychography via optimization of the tilt angles

Lithography printability review: an application on advanced photomask production for enhancing mask yield and cycle time

Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

A high-performance reconstruction method for partially coherent ptychography

Ptychography-based High-Throughput Lensless On-Chip Microscopy Via Incremental Proximal Algorithms

A Robust Pixel-Based RET Optimization Algorithm Independent of Initial Conditions

High-end EUV photomask repairs for 5nm technology and beyond

Cefotaxime and ceftriaxone levels in pancreas tissue and pancreatic juice.

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

From Computational Lithography to Computational Inspection: Inverse Lithography Technology (ILT) and Inverse Inspection Technology (IIT)

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using A Coarse-Grid-Approximation Level-Set Approach