Abstract:In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.

Partial SOI Power LDMOS with a Variable Low-K Dielectric Buried Layer and a Buried P-Layer

Novel Low- $k$ Dielectric Buried-Layer High-Voltage LDMOS on Partial SOI

Novel High Voltage LDMOS on Partial SOI with Double-Sided Charge Trenches

A New High Voltage DPSOI Structure with Variable-K Buried Layer

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

High Voltage Buried Step-Doping P+ Layer Silicon-on-insulator Lateral Double Diffused Mosfet (SOI LDMOSI) with a Back-Gate

A new partial SOI power device structure with P-type buried layer

Ultralow specific on-resistance high voltage LDMOS with a varible-K dielectric trench

A Low On-Resistance Buried Current Path SOI P-Channel LDMOS Compatible with N-Channel LDMOS

A Novel Partial SOI EDMOS (>800 V) with a Buried N-type Layer on the Double Step Buried Oxide

Uniform and Linear Variable Doping Ultra-Thin Psoi Ldmos with N-Type Buried Layer

A Novel Thin Silicon Layer PSOI High Voltage Device Structure with Step Buried Oxide

A Novel High Voltage Soi Ldmos with Buried N-Layer in A Self-Isolation High Voltage Integrated Circuit

A new Membrane PSOI High Voltage Device with a Buried P+ layer

A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer

LDMOS with Variable-k Dielectric for Improved Breakdown Voltage and Specific On-resistance

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

A 200-V SOI P-Channel LDMOS with Thick Gate Oxide Layer

A High Voltage SOI Pldmos with a Partial Interface Equipotential Floating Buried Layer

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

Analytical Model for High-Voltage SOI Device with Composite-Kdielectric Buried Layer