Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Characterizations of GaN Films and AlGaN/GaN Heterostructures on Vicinal Sapphire (0001) Substrates Grown by MOCVD

The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

Preparation of Algan/Gan Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Effect of Surface Morphology of c-plane Sapphire Substrate on Quality of γ-LiAlO2 Layer Fabricated by Vapor Transport Equilibration Technique

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition