Abstract:GaN-based heterojunction field effect transistors (HFETs) are strong contenders to replace vacuum tube-based devices in the high power, and high frequency arena. However, the piezoelectric stain, exploited to generate high density two-dimensional electron gases (2DEGs) in AlGaN/GaN devices is not necessarily desirable nor might it bode well in terms of device reliability. By using lattice-matched InAlN as the barrier, even higher densities of 2DEG and now respectable DC and RF performance can be achieved while at the same time avoiding the strain and subsequent reliability issues in the devices. However, little work has been done in identification of trapping mechanisms in the InAlN-based devices. The trapping is at the heart of the reduced RF performance of all the GaN-based devices, limiting the maximum attainable RF power. In this work, transient current spectroscopy, which observes the dynamics of the drain current during gate lag measurements, is utilized to ascertain information about the trapping levels, cross sections, and spatial locations of traps in the InAlN-based devices. Preliminary measurements indicate that one of the traps identified in this work (at 0.12eV) is similar to one measured by deep level transient spectroscopy (DLTS) in similar structures. Investigations of this type are imperative for the further development and implementation of this highly promising material system.

Nanoscale Capacitance Spectroscopy Characterization of AlGaN/GaN Heterostructure by Current-Sensing Atomic Force Microscopy

Probe Pressure Dependence Of Nanoscale Capacitance-Voltage Characteristic For Algan/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts

The Sensing Mechanism of InAlN/GaN HEMT

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing

Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al 0.25 Ga 0.75 N/GaN Quantum Point Contacts

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Investigation of Current-Voltage Characteristics of N- GaN/ I- Al X Ga 1-X N /n -Gan Structures

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier