Electron-beam Irradiation Induced Conductivity in ZnS Nanowires As Revealed by in Situ Transmission Electron Microscope

Baodan Liu,Yoshio Bando,Mingsheng Wang,Chunyi Zhi,Xiaosheng Fang,Chengchun Tang,Masanori Mitome,Dmitri Golberg
DOI: https://doi.org/10.1063/1.3173286
2009-01-01
Abstract:Electron transport variations in individual ZnS nanowires synthesized through a chemical vapor deposition process were in situ studied in transmission electron microscope under convergent electron-beam irradiation (EBI). It was found that the transport can dramatically be enhanced using proper irradiation conditions. The conductivity mechanism was revealed based on a detailed study of microstructure and composition evolutions under irradiation. EBI-induced Zn-rich domains’ appearance and related O doping were mainly responsible for the conductivity improvements. First-principles theoretical calculations additionally indicated that the generation of midbands within a ZnS band gap might also contribute to the improved conductivity.
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