Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Emission Red Shift And Temperature Increase In Electrically Powered Zno Nanowires

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

Investigation of the Temperature Dependent Field Emission from Individual ZnO Nanowires for Evidence of Field-Induced Hot Electrons Emission

Microphotoluminescence Study Of Individual Suspended Zno Nanowires

Enhanced Field Emission from Zno Nanorods Via Thermal Annealing in Oxygen

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Surface effects on photoluminescence of single ZnO nanowires

Tunable Electronic Properties of ZnO Nanowires and Nanotubes under a Transverse Electric Field

Temperature Dependence of the Piezotronic Effect in ZnO Nanowires.

Microstructure Change of ZnO Nanowire Induced by Energetic X-Ray Radiation and Its Effect on the Field Emission Properties

Influence Of Temperature And Illumination On Surface Barrier Of Individual Zno Nanowires

Thermo-enhanced Field Emission from ZnO Nanowires: Role of Defects and Application in a Diode Flat Panel X-ray Source

Electronic and Mechanical Coupling in Bent ZnO Nanowires

Electronic Transport Through Individual Zno Nanowires

PHOTOLUMINESCENCE EMITTING PROPERTIES OF SINGLE ZnO NANOWIRE STUDIED BY SCANNING NEAR-FIELD OPTICAL MICROSCOPE

Abnormal Temperature Dependence of Conductance of Single Cd-Doped Zno Nanowires

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Modifying Optical Properties of ZnO Nanowires Via Strain-Gradient

Field Emission from Nonaligned Zinc Oxide Nanowires