Great Enhancement of Pyroelectric Properties for Ba0.65Sr0.35TiO3 Films on Pt–Si Substrates by Inserting a Self-Buffered Layer

C. G. Wu,Y. R. Li,J. Zhu,X. Z. Liu,W. L. Zhang
DOI: https://doi.org/10.1063/1.3081971
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:( 100 ) -Ba 0.65 Sr 0.35 TiO 3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16×104 μC m−2 K−1 and 2.18×10−4 Pa−1/2, respectively. The detectivity of 9.4×107 cm Hz1/2 W−1 was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO2 films.
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