First-principles Study of the Electonic Structure of Nitrogen-Doped Silicon Carbide Nanotubes

Song Jiu-Xu,Yang Yin-Tang,Liu Hong-Xia,Zhang Zhi-Yong
DOI: https://doi.org/10.7498/aps.58.4883
IF: 0.906
2009-01-01
Acta Physica Sinica
Abstract:The electronic structures of the intrinsic and nitrogen-doped silicon carbide nanotubes (SiCNTs) have been calculated by first-principles approach based on the density functional theory. The intrinsic (8, 0) SiCNT is a direct band-gap semiconductor with a gap value of 0.94 eV. The band-gap of the SiCNT with the doping concentration of nitrogen being 1.56% and 3.12% is narrowed to 0.83 eV and 0.74 eV, respectively. The narrowing of the band-gap is the result of the weakening of the Si-N bonds compared with the corresponding Si-C bonds, which can be seen by comparing the charge density difference of the intrinsic SiCNT with that of the nitrogen-doped nanotube.
What problem does this paper attempt to address?