Abstract:Density functional theory at the level of (U)B3LYP has been used to investigate the complete oxidation of the Si(111)-7 X 7 surface by water. The results suggest that the initial water dissociation readily occurs across an adjacent adatom-rest atom (Si-a-Si-r) pair, resulting in either Si-a-OH + Si-r-OH (i.e., the Si, route) or Si-r-OH + Si-a-H (i.e., the Si,. route). Both routes are found to follow the precursor-mediated pathway, while the Si-r atom is concluded to be more reactive than the Si, atom toward the initial decomposition of the H2O molecule due to its higher binding affinity to the incident water. With increasing water exposure and reaction temperature, deep oxidation can be accomplished by steady oxygen atom insertion into the Si-a Si, backbonds until the Si4+ oxidation state is eventually developed. Our calculations uncover that the most favorable pathway for deep oxidations begins with the direct water dissociation over the Si-a-Si-s backbond, followed by H-2 liberation. This differs from the recent proposal via the OH insertion. Our deep oxidation mechanism can also be applied to the oxidation of an isolated adatom, which gives an explanation to the experimental observation where more than 50% of Si, are involved in water oxidation. The present work provides the detailed energetics that sheds light on the wet oxidation mechanism of silicon surfaces at the molecular level.

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