Revealing the transport mechanisms of silicon oxidation by H_2~(18)O/H_2~(16)O isotopic labeling

Gong Jia,Jiang Yi-Ming,Zhong Cheng,Deng Bo,Liu Ping,Li Jin
IF: 0.906
2009-01-01
Acta Physica Sinica
Abstract:A new method was proposed to investigate the transport mechanism of silicon oxidation at 1100 ℃ using H_2~ 16 O/H_2~ 18 O isotopic labeling. The formation and structure of silicon oxide film was analysed. The distribution of ~ 16 O and ~ 18 O in the oxide film was analysed by means of secondary ion mass spectroscopy (SIMS). The results demonstrate that the oxide film is non-crystalline during the oxidation of silicon in the water vapor and the transport mechanism is substitutional diffusion mechanism.
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