Tunable Ferromagnetism by Oxygen Vacancies in Fe-Doped In2o3 Magnetic Semiconductor

P. F. Xing,Y. X. Chen,Shi-Shen Yan,G. L. Liu,L. M. Mei,Z. Zhang
DOI: https://doi.org/10.1063/1.3202287
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:Fe-doped In2O3 films with well defined bcc (440) texture were grown on r-cut sapphire at different oxygen pressures by pulsed laser deposition. Nonmonotonic dependence of ferromagnetism on oxygen pressure has been observed. Under optimal deposition conditions, the saturation magnetization can reach 2.5μB/Fe atom. Moreover, the ferromagnetism can be reversed between the higher magnetization state and the lower magnetization state by alternate annealing in vacuum and in air. All these features are well explained by a modified model of F-center mediated ferromagnetism.
What problem does this paper attempt to address?