Oxygen Vacancy Induced Electrical Conductivity Enhancement in Ca-Doped BiFeO3 Thin Films

Tong Zhang,Wenhai Zhao,Qiqian Wu,Cong Yin,Mi Zhao,Zhidong Li,Liang Wu,Hui Zhang,Sheng'an Yang,Qingming Chen,Jianhong Yi,Ji Ma
DOI: https://doi.org/10.1016/j.jallcom.2024.176826
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Bismuth ferrite, recognized for its exceptional physical properties as a multiferroic material, has recently attracted considerable attention due to its high domain wall conduction. However, challenges in further improving domain wall conductivity and magnetoelectric coupling hamper the practical application of purephase BFO thin films. Addressing these limitations, we successfully synthesized Bi1-xCaxFeO3 thin films on LaAlO3 (001) substrates with varied calcium (Ca) doping levels (x = 0-0.3) through pulsed laser deposition. Our experimental data demonstrate a direct relationship between the films' electrical conductivity and the prevalence of oxygen vacancies (OV). An upward trend in both OV density and electrical conductivity emerges with incremental Ca doping, peaking at x = 0.2. Beyond this doping threshold, a further increase in Ca concentration inversely affects OV density and electrical conductivity. These insights suggest that fine-tuning OV concentration in Ca-doped BFO thin films can significantly modulate their electrical properties, paving the way for the advancement of bismuth ferrite-based electronic devices.
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