Improved Electric Properties of Nd-Doped Bifeo3 Thin Films Prepared by Metal Organic Decomposition Method

Fengzhen Huang,Xiaomei Lu,Zhe Wang,Shu Xu,Xiumei Wu,Jinsong Zhu
DOI: https://doi.org/10.1080/10584580802101216
2008-01-01
Integrated Ferroelectrics
Abstract:Polycrystalline BiFeO3 (BFO) and Bi-0.9 Nd-0.1 FeO3 thin films were prepared by a simple MOD method on (111) Pt/Ti/SiO2/Si substrates. The effect of Nd dopant on the electric properties of BFO was studied. It was found that Nd doping in BFO film reduced the leakage current due to the decreased oxygen vacancies and Fe2+ fraction, and thus enhanced the ferroelectric and dielectric characteristics. Meanwhile, the conduction mechanisms of our films were space-charge limited in lower electric field and Ohmic in higher electric field.
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