Fabrication and Characterization of Fe-Doped in 2 O 3 Dilute Magnetic Semiconducting Nanowires

Zhang Jun-Ran,Wu Zhen-Yao,Liu Yu-Jie,Lv Zhan-Peng,Niu Wei,Wang Xue-Feng,Du Jun,Liu Wen-Qing,Zhang Rong,Xu Yong-Bing
DOI: https://doi.org/10.1088/0256-307x/32/3/037501
2015-01-01
Chinese Physics Letters
Abstract:Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.
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