Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Magnetic Properties of Zno:Cu Thin Films Prepared by Rf Magnetron Sputtering

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Magnetic Properties of N-Type Cu-Doped Zno Thin Films

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Magnetic and Optical Properties of Zn1−xCoxO Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

The Structural and Magnetic Properties For Zn1-xCoxO Thin Films

The Magnetic Mechanism of Zn0.93co0.07o Thin Films

Ferromagnetism In Mn And Sb Co-Doped Zno Films

Exafs and Sr-Xrd Study on Cu Occupation Sites in Zn1-Xcuxo Diluted Magnetic Semiconductors

The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

Room-Temperature Ferromagnetism in N-Type Cu-Doped Zno Thin Films

Room-Temperature Ferromagnetic Znmno Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Electrical and Magnetic Properties of (al, Co) Co-Doped ZnO Films Deposited by RF Magnetron Sputtering

Optical Demagnetization in Defect-Mediated Ferromagnetic Zno:Cu Films

Microstructure and Properties of Cu-Doped Zno Films Prepared by Dc Reactive Magnetron Sputtering

Structure and Magnetic Properties of Zn1-xCoxO Thin Film

Influence of P-Type and N-Type Dopants on the Magnetic Properties of Zncuo Based Diluted Magnetic Semiconductor Thin Films

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Structure, Optical, and Magnetic Properties of Sputtered Manganese and Nitrogen-Codoped ZnO Films