Abstract:Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for a variety of applications. AlN films were prepared by remote plasma atomic layer deposition (RP-ALD) with the growth temperature of 100 to 450 °C. The properties of AlN films with various growth temperatures were studied systematically. In addition, AlN/GaN layers deposited on sapphire (Al 2 O 3 ) substrates were also investigated. The AlN/GaN interfaces and AlN/Al 2 O 3 interfaces characteristics were analyzed. The optical property of GaN films prepared on sapphire substrates with and without AlN buffer layer were identified by photoluminescence measurement. The experiment result shows that crystal AlN films became to present at 250 °C with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy investigation shows that AlN films contain Al-O, Al-O-N complexes and Al-Al metallic aluminum bonds except the main Al-N bond confirmed by high resolution Al 2p and N 1s spectra. High-resolution transmission electron microscopy measurement reveals sharp interfaces of AlN/Al 2 O 3 and AlN/GaN. The obtained lowest lattice mismatch of AlN/Al 2 O 3 and AlN/GaN are 11.0% and 2.1%, respectively. Photoluminescence measurement further confirms that AlN buffer layer enhances the quality of GaN grown on sapphire substrates. High quality AlN/GaN layers prepared by RP-ALD provides a promising pathway towards high quality GaN-based devices.

Effect Of A High Temperature Aln Buffer Layer Grown By Initially Alternating Supply Of Ammonia On Algan/Gan Heterostuctures

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

A 2 Nm Low Temperature Gan Spacer To Improve The Transport Properties Of Two-Dimensional Electron Gas In Algan/Inaln/Aln/Gan Heterostructures

Growth and Characterization of Algan/Aln/Gan/Algan Double Heterojunction Structures with Algan As Buffer Layers

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Influence of High-Temperature Ain Buffer Thickness on the Properties of Gan Grown on Si(111)

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Effect of different buffer layers on the quality of InGaN layers grown on Si

Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE