Transport and Thermoelectric Properties of Nanocrystal Substitutional Semiconductor Alloys (mg1−xcdx)3sb2 Doped with Ag

K. X. Zhang,X. Y. Qin,H. X. Xin,H. J. Li,J. Zhang

DOI: https://doi.org/10.1016/j.jallcom.2009.04.130

IF: 6.2

2009-01-01

Journal of Alloys and Compounds

Abstract:Nanocrystalline (Mg1−xCdx)3Sb2 (x=0–0.3) and nominally (Mg0.7Cd0.25Ag0.05)3Sb2 with a mean grain size of ∼35nm were prepared by mechanical alloying plus hot-pressing, and their transport and thermoelectric properties were investigated from 310K down to 20K. The results indicated that electric resistivity of (Mg1−xCdx)3Sb2 decreased with increasing Cd content x, which could be ascribed to increase in carrier concentration indirectly caused by lattice distortion after substituted. The much larger decrease in the resistivity of (Mg0.7Cd0.25Ag0.05)3Sb2 than that of (Mg1−xCdx)3Sb2 should originate from substantial increase in hole concentration due to introduction of acceptor impurity Ag. At lower temperature regimes, Mott's T−1/4 law was observed, which could be attributed to the severe potential disorder caused by lattice distortion upon doping. Seebeck coefficient of all the substituted and co-doped specimens decreased presumably due to increased carrier concentration. Moreover, thermal conductivity of (Mg1−xCdx)3Sb2 decreased monotonously with increasing x due to phonon scattering of the impurity (Cd) with greater atomic weight. The presence of slight precipitated elementary Sb and Cd phases should be responsible for the observed larger thermal conductivity of (Mg0.7Cd0.25Ag0.05)3Sb2 specimen. The values of the ZT for all the doped specimens enhanced. Especially, ZT of (Mg0.7Cd0.25Ag0.05)3Sb2 reach 0.01 at 300K, which is several orders magnitude higher than that un-doped one and those doped slightly with Cd only. Present result indicates that thermoelectric properties of Mg3Sb2 system can be effectively improved by the proper substitution of element Cd and co-doped with element Ag.