Realizing N-Type CdSb with Promising Thermoelectric Performance
Peng Zhao,Honghao Yao,Shizhen Zhi,Xiaojing Ma,Zuoxu Wu,Yijie Liu,Xinyu Wang,Li Yin,Zongwei Zhang,Shuaihang Hou,Xiaodong Wang,Siliang Chen,Chen,Xi Lin,Haoliang Liu,Xingjun Liu,Feng Cao,Qian Zhang,Jun Mao
DOI: https://doi.org/10.1016/j.jmst.2022.10.017
2023-01-01
Journal of Material Science and Technology
Abstract:Realizing high performance in both n-type and p-type materials is essential for designing efficient ther-moelectric devices. However, the doping bottleneck is often encountered, i.e., only one type of conduction can be realized. As one example, p-type CdSb with high thermoelectric performance has been discovered for several decades, while its n-type counterpart has rarely been reported. In this work, the calculated band structure of CdSb demonstrates that the valley degeneracy is as large as ten for the conduction band, and it is only two for the valence band. Therefore, the n-type CdSb can potentially realize an ex-ceptional thermoelectric performance. Experimentally, the n-type conduction has been successfully real-ized by tuning the stoichiometry of CdSb. By further doping indium at the Cd site, an improved room -temperature electron concentration has been achieved. Band modeling predicts an optimal electron con-centration of similar to 2.0 x 10 19 cm -3, which is higher than the current experimental values. Therefore, future optimization of the n-type CdSb should mainly focus on identifying practical approaches to optimize the electron concentration.(c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.