Abstract:Line edge roughness (LER) has been an important issue in the nanofabrication research, especially in integrated circuits. Despite numerous research studies has made efforts on achieving smaller LER value, a strategy to achieve sub-nanometer level LER still remains challenging due to inability to deposit energy with a profile of sub-nanometer LER. In this work, we introduce a strategy to fabricate structures with sub-nanometer LER, specifically, we use scanning helium ion beam to expose hydrogen silsesquioxane (HSQ) resist on thin SiNx membrane (∼20 nm) and present the 0.16 nm spatial imaging resolution based on this suspended membrane geometric construction, which is characterized by scanning transmission electron microscope (STEM). The suspended membrane serves as an energy filter of helium ion beam and due to the elimination of backscattering induced secondary electrons, we can systematically study the factors that influences the LER of the fabricated nanostructures. Furthermore, we explore the parameters including step size, designed exposure linewidth (DEL), delivered dosage and resist thickness and choosing the high contrast developer, the process window allows to fabricate lines with 0.2 nm LER is determined. AFM measurement and simulation work further reveal that at specific beam step size and DEL, the nanostructures with minimum LER can only be fabricated at specific resist thickness and dosage.

Analysis Method for Nanometer-Scale Line Edge Roughness Based on Stationary Wavelet Transform

Amplitude and Spatial Frequency Characterization of Line Edge Roughness Using AFM

Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes

Analysis and Characterization of Line Edge Roughness of Nanostructures

Influence Factors of Line Edge Roughness Measured by AFM

Multiscale Characterization Method For Line Edge Roughness Based On Redundant Second Generation Wavelet Transform

Spatial analysis of line-edge roughness through scaling and fractal concepts using AFM techniques

Surface Roughness Evaluation By Using Wavelets Analysis

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

Recognition of the Single-Side Surface and Measurmement of Line Edge Roughness

Method of In-Process Measurement of Wafer Surface Quality Based on Laser Scattering Principle

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Study on Parameters of Line Edge Roughness Based on Wavelet Theory

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Investigations on the Correlation Between Line-Edge-roughness (LER) and Line-Width-roughness (LWR) in Nanoscale CMOS Technology

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Canny Algorithm Enabling Precise Offline Line Edge Roughness Acquisition in High-Resolution Lithography.

Measurement and Calculation Method for Sub-20 Nm Line and DSA Patterns

Effect Of Tip Shape On Line Edge Roughness Measurement Based On Atomic Force Microscopy