Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Laser-Induced Structural, Electrical And Optical Properties Evolution Of Phase Change Ge(2)Sb(2)Te(5) Thin Films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Thermal And Laser-Induced Phase-Transformation In Rf-Sputtered Gesb2te4 Thin-Films

Phase Change-Regulated Nonlinear Optical Properties of GeSb 4 Te 7 Films Prepared by RF Magnetron Sputtering

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Optical Constants of Laser-Induced Crystalline Ge2Sb2Te5 Phase-Change Media

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

METASTABLE PHASE FORMATION AND STRUCTURAL-CHANGE CHARACTERISTICS OF VAPOR-DEPOSITED SEMICONDUCTOR-FILMS

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Phase Change and Optical Band Gap Behavior of Ge–Te–Ga Thin Films Prepared by Thermal Evaporation