A Switched-Reset 300e Enc 10mw Readout Asic In 180nm Cmos For Cdznte Particle Detector

,xinguang chen,Qi Zhang, ,xiangyu li,yihe sun
DOI: https://doi.org/10.1109/ASICON.2009.5351445
2009-01-01
Abstract:A 180nm CMOS front-end readout circuit for CdZnTe particle detector with tens of pF capacitance is presented. It uses switched-reset system and 4(th)-order complex pole semi-gaussian shaper. The input MOSFET is optimized with the consideration of the properties of deep sub micron technologies and the limitation of power dissipation. And a swing reduction technique is used on the switch signal to improve the parasitic effects. The post-layout simulation result shows that the readout ASIC has about a 300e ENC at 20pF detector capacitance and 10mW power dissipation.
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