A Fully Integrated CMOS Readout Circuit for Particle Detectors

Yacong Zhang,Zhongjian Chen,Wengao Lu,Baoying Zhao,Lijiu Ji
DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.02.008
2007-01-01
Abstract:Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.
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