Abstract:Highly tetrahedral amorphous carbon (ta-C) films and its hydrogenated form (ta-C:H) have been deposited using a filtered cathodic are. In this paper, the optical and electronic band-gaps of amorphous diamond and its hydrogenated form ta-C:H, are shown to be in the range 2 eV. The H content of ta-C: H is found to be about 3 at.% using elastic recoil detection analysis (ERDA) and electron energy loss spectroscopy (EELS) is used to show that ta-C:H does keep its tetrahedral structure. Both materials are found to be stable at temperatures up to 1000K. The room temperature conductivity of 10(-7)10(-8)Omega(-1)cm(-1) is shown to be thermally activated, with activation energies in the range 0.2-0.3 eV. A detailed study made from the current-voltage characteristics of ta-Clp-Si heterojunctions shows that current flow is space-charge limited (SCLC) and influenced by bulk traps. The density of states profile, N(E), in the region of the quasi-Fermi level is calculated using the differential method and found to be of the order 10(18) cm(-3) eV(-1). Optical absorption data is coupled with the electrical results to confirm that the valence band density of states is of the order 10(21) cm(-3) eV(-1). It is also shown that there is a reduction of nearly one order of magnitude in the N(E) at the quasi-Fermi level upon hydrogenation. SCLC measurements are complemented with surface admittance measurements (SAM) which yield a value of 10(11) cm(-2) eV(-1) for the interfacial density of states at the ta-C/p-Si junction. A decrease in N-ss is also observed at the ta-C:H/p-Si interface in agreement with the SCLC results.

S P 3 -Rich Deposition Conditions and Growth Mechanism of Tetrahedral Amorphous Carbon Films Deposited Using Filtered Arc

Influence of Ion Energy and Substrate Temperature on the Optical and Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films

Properties of Tetrahedral Amorphous Carbon Prepared by Vacuum Arc Deposition

Effect of Substrate Bias on Microstructure and Properties of Tetrahedral Amorphous Carbon Films

Highly Tetrahedral Amorphous Carbon Films with Low Stress

Deposition of Smooth Tetrahedral Amorphous-Carbon Thin-Films Using A Cathodic Arc Without A Macroparticle Filter

Cross-Sectional Structure Of Tetrahedral Amorphous Carbon Thin Films

Strongly Adhering and Thick Highly Tetrahedral Amorphous Carbon (ta–c) Thin Films Via Surface Modification by Implantation

Structure and Tribological Properties of Ultra-Thin Tetrahedral Amorphous Carbon (ta-C) Films

Properties Of Filtered-Ion-Beam-Deposited Diamond-Like Carbon As A Function Of Ion Energy (Vol 48, Pg 4777, 1993)

Influence of Carbon Ion Energy on Properties of Highly Tetrahedral Diamond-Like Carbon

Structure and Properties of Ta-C Films Deposited by Filtered Cathodic Vacuum Arc Technology As a Function of Substrate Bias

Effects of Mass Density on the Microhardness and Modulus of Tetrahedral Amorphous Carbon Films

Stress, Microstructure and Mechanical Properties of Graded Multilayer Tetrahedral Amorphous Carbon Films

Evolution of Sp2 Bonding with Deposition Temperature in Tetrahedral Amorphous Carbon Studied by Raman Spectroscopy

Deposition of Tetrahedral Hydrogenated Amorphous Carbon Using a Novel Electron Cyclotron Wave Resonance Reactor

Tetrahedral Amorphous-Carbon Properties and Applications

Electronic density of states in highly tetrahedral amorphous carbon

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

Boronated Tetrahedral Amorphous Carbon (Ta-C:B)

Properties of Tetrahedral Amorphous Carbon Films Deposited in a Filtered Cathodic Arc in the Presence of Hydrogen