An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects

Luan Suzhen,Liu Hongxia,Jia Renxu,Cai Naiqiong,Wang Jin,Kuang Qianwei

DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.05.012

2008-01-01

Journal of Semiconductors

Abstract:A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body anddouble-gate Schottky barrier MOSFETs (UTBDG SBFETs) is developed. In this model, Schrodinger's equation is solved u-sing the triangular potential well approximation. The carrier density thus obtained is included in the space charge density toobtain quantum carrier confinement effects in the modeling of thin-body devices. Due to the quantum effects, the first sub-band is higher than the conduction band edge, which is equivalent to the band gap widening. Thus, the barrier heights atthe source and drain increase and the carrier concentration decreases as the drain current decreases. The drawback of theexisting models, which cannot present an accurate prediction of the drain current because they mainly consider the effectsof Schottky barrier lowering (SBL) due to image forces,is eliminated. Our research results suggest that for small nonnega-tire Schottky barrier (SB) heights,even for zero barrier height,the tunneling current also plays a role in the total on-statecurrents. Verification of the present model was carried out by the device numerical simulator-Silvaco and showed goodagreement.