Study on Reactive Ion Etching of Parylene C Polymer Film

Ya-jun WANG,Jing-quan LIU,Xiu-cheng SHEN,Chun-sheng YANG,Zhong-yuan GUO,Yue- RUI
2008-01-01
Abstract:The Parylene, and etched the Parylene C film using RIE were briefly introduced. The effect of process parameters on the etching rate was discussed. The optimum etching parameters were proposed. It is demonstrated that the etching rate increases continually with the increased power density. It will be favorable for anisotropic etching to properly increase the power density. The etching rate initially increases with the increasing gas pressure quickly but keeps constant approximately after 10.67 Pa.
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