Abstract:The landscape of emerging applications has been continually widening, encompassing various data-intensive applications like artificial intelligence, machine learning, secure encryption, Internet-of-Things, etc. A sustainable approach toward creating dedicated hardware platforms that can cater to multiple applications often requires the underlying hardware to context-switch or support more than one context simultaneously. This paper presents a context-switching and dual-context memory based on the standard 8T SRAM bit-cell. Specifically, we exploit the availability of multi-VT transistors by selectively choosing the read-port transistors of the 8T SRAM cell to be either high-VT or low-VT. The 8T SRAM cell is thus augmented to store ROM data (represented as the VT of the transistors constituting the read-port) while simultaneously storing RAM data. Further, we propose specific sensing methodologies such that the memory array can support RAM-only or ROM-only mode (context-switching (CS) mode) or RAM and ROM mode simultaneously (dual-context (DC) mode). Extensive Monte-Carlo simulations have verified the robustness of our proposed ROM-augmented CS/DC memory on the Globalfoundries 22nm-FDX technology node.

Nonvolatile SRAM Cell Based on CuxO

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A Low Power 4T2C Nvsram with Dynamic Current Compensation Operation Scheme

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.

Simulation of the RRAM based Nonvolatile SRAM cell

Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

A symmetric 8T2R NVSRAM with autosave function

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Novel 15T SRAM Cell for Low Voltage High Reliability Application

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

A Design of Subthreshold SRAM Cell Based on RSCE and RNCE.

Variation-Tolerant Cuxsiyo-Based Rram For Low Power Application

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

A Context-Switching/Dual-Context ROM Augmented RAM using Standard 8T SRAM