Abstract:A complete carrier-based non-charge-sheet analytic model for nano-scale undoped symmetric doublegate MOSFETs is presented in this paper. The formulation is based on the Poisson's equation to solve for the carrier (electron) concentration directly rather than relying on the surface potential alone. Therefore, the distribution of the potential, the field, and the charge density in the channel away from the surface is also expressed in terms of the carrier concentration, giving a complete carrier-based noncharge-sheet model for nano-scale undoped symmetric double-gate MOSFETs including the short-channel effects. The model formulation has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potential model or classical Pao-Sah formulation. As a result, the model can analytically predict the analytical I-V and C-V characteristics of the undoped symmetric double-gate MOSFETs. The validity of the model results has also been demonstrated by the extensive comparison with the 2-D numerical simulation and experimental data.

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