Effects of Annealing Time on Properties of ZnO:Al Thin Films Formed by Sol-gel Technique

袁兆林,祖小涛,薛书文,李绪平,向霞,王毕艺,田东彬,邓宏,毛飞燕
DOI: https://doi.org/10.16818/j.issn1001-5868.2008.04.023
2008-01-01
Abstract:ZnO:Al thin films doped with 0. 1% aluminum (Al/Zn=0.1%) were deposited on quartz glass by the sol-gel technique. The as-prepared sample is annealed in argon ambient at 500°C and annealing time is varied between 1 and 5 h. The effects, of different annealing time on the properties of ZnO:Al thin films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and four-probe method. Results show that when annealing time is 1 h, the sample exhibits preferred c-axis orientation, DLE is enhanced, the optical transmittances is about 80% in the visible region and the resistivity of the sample is only 4 × 10-2 Ω· cm. When annealing time exceeds 1 h, the crystal quality becomes poor and the resistivity is increased continuously with increasing annealing time.
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