Abstract:Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystallinity and film properties. The results show that the film thickness increases with annealing temperature owing to the increment of oxide layer caused by the suppression of oxygen vacancy defects as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra. The film transmittance is seldom influenced by annealing. The refractive index increases with annealing temperature at 300–700 °C, possibly due to higher density and crystallinity of the film. The band gap decreases after annealing, which should be ascribed to the decrease in carrier concentration according to Burstein–Moss model. The carrier concentration decreases with increasing annealing temperature at 300–700 °C since the oxygen vacancy defects are suppressed, then it increases at 800 °C possibly due to the out-diffusion of oxygen atoms from the film. Meanwhile, the carrier mobility increases with temperature due to higher crystallinity and larger crystallite size. The film resistivity increases at 300–700 °C then decreases at 800 °C, which should be ascribed primarily to the variation of carrier concentration.

Effects of Annealing Time on Properties of ZnO:Al Thin Films Formed by Sol-gel Technique

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Effect of Annealing on Photoluminescence of ZnO: Al Thin Films Prepared by Sol-Gel Method

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Study on Microstructure and Electrical Properties of ZnO:Al Thin Films Prepared by Sol-gel Method

Effect of Annealing Temperature on Photoluminescence of ZnO/Graphene Nano-films Deposited by Sol-gel Method

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions

Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Effect of Post-Annealing Treatments on the Properties of Zn1−xCdxO Films on Glass Substrates

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

Effect of annealing on the structural, topographical and optical properties of sol gel derived ZnO and AZO thin films