A Precise Model of Electron Tunneling Current Through Ultra-thin-oxide NMOS

Zonglin LI,Jingping XU,Shengguo XU
DOI: https://doi.org/10.3969/j.issn.1000-3819.2008.02.002
2008-01-01
Abstract:A precise model of electron tunneling current through ultrathin-oxide NMOS is presented in this paper. Surface potential distribution, quantized energy levels and electron distribution of 2-D inversion electron gas are calculated by self-consistently solving the one-dimensional Schrodinger and Poisson equations. A multi-step potential approximation is used to calculate quantum mechanical transmission probability through the oxide barrier, which overcomes a problem that wave function is discontinuous at abrupt boundary in WKB approximation. Dependence of direct tunneling current on thickness of gate oxides is analyzed under various gate voltages by considering depletion effect in polysilicon and multiple-energy valley effect of conduction band in Si substrate. The simulation results are in a good agreement with experimental data.
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