Abstract:<p>Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrödinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p+1 family, the device exhibits better switching performance. 7- armchair GNRFET at 7 nm exhibits an outstanding subthreshold swing of ∼67 mV/dec and a DIBL of ∼54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.</p>

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

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Simulation of Graphene Nanoribbon Field Effect Transistors

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Modeling of Schottky and Ohmic Contacts Between Metal and Graphene Nanoribbons Using Extended Hückel Theory (Eht)-Based NEGF Method

Modeling and Simulation of Uniaxial Strain Effects in Armchair Graphene Nanoribbon Tunneling Field Effect Transistors

Computational Model of Edge Effects in Graphene Nanoribbon Transistors

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

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Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET