Modeling and Simulation of Uniaxial Strain Effects in Armchair Graphene Nanoribbon Tunneling Field Effect Transistors

Jiahao Kang,Yu He,Jinyu Zhang,Xinxin Yu,Ximeng Guan,Zhiping Yu
DOI: https://doi.org/10.1063/1.3456533
IF: 4
2010-01-01
Applied Physics Letters
Abstract:In this paper, we perform a modeling and simulation study on strained armchair graphene nanoribbon (AGNR). Two uniaxial strain models based on a tight binding method are compared with results from first-principles calculation. Tunneling field effect transistors (TFETs) with channels made of strained AGNR of different widths are modeled and simulated by a ballistic quantum transport model based on nonequilibrium Green’s function and nonparabolic effective mass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNR can achieve better device performance.
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