Abstract:The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo-Greenwood, and non-equilibrium Green's function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

Nanoelectronic Device Simulation Using Extended Hückel Theory (EHT) and NEGF

Modeling of Schottky and Ohmic Contacts Between Metal and Graphene Nanoribbons Using Extended Hückel Theory (Eht)-Based NEGF Method

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Intrinsic electron injection model for linear 2D materials: Full quantum Monte Carlo time-dependent simulation of graphene devices

Deep Learning Accelerated Quantum Transport Simulations in Nanoelectronics: From Break Junctions to Field-Effect Transistors

Electron injection model for linear and parabolic 2D materials: Full quantum time-dependent simulation of graphene devices.

Development of an Novel Approach for the Simulation of Nanodevices Using FDTD

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Derivative of Electron Density in Non-Equilibrium Green'S Function Technique and Its Application to Boost Performance of Convergence

ELEQTRONeX: A GPU-Accelerated Exascale Framework for Non-Equilibrium Quantum Transport in Nanomaterials

Boundary Treatments in Non-Equilibrium Green's Function (NEGF) Methods for Quantum Transport in Nano-Mosfets

Nonlinear electronic transport in nanoscopic devices: Nonequilibrium Green's functions versus scattering approach

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Modeling and Simulation of Nano-devices