Nonlinear electronic transport in nanoscopic devices: Nonequilibrium Green's functions versus scattering approach

Alexis R. Hernández,Caio H. Lewenkopf

DOI: https://doi.org/10.48550/arXiv.0907.2073

2009-07-13

Abstract:We study the nonlinear elastic quantum electronic transport properties of nanoscopic devices using the Nonequilibrium Green's function (NEGF) method. The Green's function method allows us to expand the $I-V$ characteristics of a given device to arbitrary powers of the applied voltages. By doing so, we are able to relate the NEGF method to the scattering approach, showing their similarities and differences and calculate the conductance coefficients to arbitrary order. We demonstrate that the electronic current given by NEGF is gauge invariant to all orders in powers of $V$, and discuss the requirements for gauge invariance in the standard Density Functional Theory (DFT) implementations in molecular electronics. We also analyze the symmetries of the nonlinear conductance coefficients with respect to a magnetic field inversion and the violation of the Onsager reciprocity relations with increasing source-drain bias.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the theoretical study of the nonlinear elastic quantum electron transport characteristics in nano - scale devices. Specifically, the authors use the Nonequilibrium Green's Function (NEGF) method to study these characteristics and compare it with the scattering method to show the similarities and differences between the two. The following are the main problems and objectives of the paper:

1. **Nonlinear transport characteristics**: Study the electron transport behavior of nano - devices under nonlinear conditions, especially the current - voltage (I - V) characteristics.
2. **Comparison between NEGF and the scattering method**: Calculate the conductivity coefficients of any order by the NEGF method and compare the results with those of the scattering method to reveal the connections and differences between the two methods.
3. **Gauge invariance**: Prove that the electron current given by the NEGF method is gauge - invariant in the voltage power - series expansion of any order, and discuss the requirements for maintaining gauge invariance in the standard density functional theory (DFT) implementation of molecular electronics.
4. **Symmetry analysis**: Analyze the symmetry of the nonlinear conductivity coefficients with respect to the magnetic field reversal, and the breakdown of the Onsager reciprocity relation when the source - drain bias increases.

### Formula summary

1. **Current expression**
\[
I_\alpha = -\frac{2e}{\hbar} \int_{-\infty}^{\infty} dE \frac{1}{2\pi} \operatorname{Im} \operatorname{Tr} \left\{ \Gamma_\alpha \left[ G^<(E) + f_\alpha(E) G^r(E) \right] \right\}
\]

2. **Transmission coefficient**
\[
T_{\alpha\beta}(E, \{V_\gamma\}) = \operatorname{Tr} \left[ \Gamma_\alpha G^r(E) (\Gamma_{\delta\alpha\beta} - \Gamma_\beta) G^a(E) \right]
\]

3. **Linear conductivity coefficient**
\[
G_{\alpha\beta} = -\frac{2e^2}{h} \int_{-\infty}^{\infty} dE \left( -\frac{\partial f_0}{\partial E} \right) T_{\alpha\beta}(E, \{V_\gamma\} = 0)
\]

4. **Second - order conductivity coefficient**
\[
G_{\alpha\beta\gamma} = -\frac{2e^3}{h} \int_{-\infty}^{\infty} dE \left( -\frac{\partial f_0}{\partial E} \right) \int_V dr \left[ u_\gamma(r) - \frac{\delta_{\beta\gamma}}{2} \right] \frac{\delta T_{\alpha\beta}}{\delta U(r)} \bigg|_{\{V_\delta\} = 0}
\]

Through these formulas, the authors show how to calculate the conductivity coefficients systematically and explore the performance of the two methods under different approximations. This not only helps to understand the nonlinear transport phenomena in nano - devices, but also provides a basis for future theoretical development.