Roger K. Lake,Rajeev R. Pandey
Abstract:We present an overview of electronic device modeling using non-equilibrium Green function techniques. The basic approach developed in the early 1970s has become increasingly popular during the last 10 years. The rise in popularity was driven first by the experimental investigations of mesoscopic physics made possible by high quality semiconductor heterostructures grown by molecular beam epitaxy. The theory has continuously been adapted to address current systems of interest moving from the mesoscopic physics of the late 1980s to single electronics to molecular electronics to nanoscaled FETs. We give an overview of the varied applications. We provide a tutorial level derivation of the polar optical phonon self-energy [1]. Then, focusing on issues of a non-orthogonal basis used in molecular electronics calculations, we derive and the basic Green function expressions starting from their definitions in second quantized form in a non-orthogonal basis. We derive the equations of motion for the retarded Green function G^R and the correlation function G^<, and we derive the standard expressions for the electron density and the current that are in widespread use. We point out common approximations and open questions of which one finds little discussion in the literature.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in electronic device modeling, how to effectively use the Non - Equilibrium Green's Functions (NEGF) technique to describe and predict electron transport characteristics at the nanoscale. Specifically, the paper focuses on the high - bias, quantized electron and hole transport phenomena through nanoscale materials under the condition of finite bias voltages.
### Analysis of the Core Problems in the Paper
1. **Application Background of the NEGF Technique**:
- Since the early 1970s, the NEGF method has been widely used in the research of various physical systems, such as quantum optics, quantum corrections to the Boltzmann transport equation, and high - field transport in bulk materials.
- In the past decade, with the progress of experimental techniques (for example, molecular beam epitaxy for growing high - quality semiconductor heterostructures), the NEGF method has been widely applied in mesoscopic physics, single - electron devices, molecular electronics, and nanoscale field - effect transistors (FETs).
2. **Specific Applications of the NEGF Method**:
- This method can handle a variety of physical phenomena, including open - system boundary conditions, full - band structure, band - tail effects, self - consistent Hartree potential, exchange - correlation potential, phonon scattering, alloy disorder, and interface roughness scattering.
- Especially in nanoscale electron transport, the NEGF method can accurately describe quantum tunneling effects, single - electron charging effects, non - equilibrium Kondo systems, shot noise, AC response, and transient response.
3. **Development and Challenges of the NEGF Theory**:
- The paper reviews the development process of the NEGF theory and points out the common approximations and unsolved problems in current research.
- For example, when dealing with the self - energy of polar optical phonons, the author derives relevant formulas in detail and discusses the application of non - orthogonal bases in molecular electronics calculations.
4. **Analysis of Practical Cases**:
- The article also introduces the simulation research on resonant tunneling diodes (RTDs) and other nano - electronic devices in the NEMO project, demonstrating the importance of the NEGF method in practical engineering design.
- By comparing theoretical calculations with experimental data, the effectiveness and limitations of the NEGF model are verified, especially at room temperature, the valley current of some devices is mainly determined by incoherent scattering processes.
### Summary
In general, this paper aims to explore the application of the NEGF method in nanoscale electronic device modeling and the challenges it faces. Through in - depth analysis of the NEGF theory and research on specific cases, the author hopes to provide valuable references and guidance for future research.