The Research of Annealing Characteristics of Transparent Zno Thin Film

Wang Huijuan,Zeng Xiangbin,Song Peike,Zhang Xia,Pan Tao,Chen Yu

DOI: https://doi.org/10.1007/978-3-540-75997-3_243

2007-01-01

Abstract:The transparent nanometer ZnO thin films were deposited on glass substrate by radio frequency (RF) in situ magnetron sputtering at room temperature, and then annealed at different temperatures by rapid thermal process. After that, the transparency, crystal structure and surface morphology characteristics of ZnO thin films were analyzed by ultraviolet-visible spectrophotometer UV-2550, X-ray diffraction (XRD) and scan electron microscope (SEM). The influence of annealing temperature on the film characteristics was investigated. The results show that after annealing, ZnO thin films have only a diffraction peak at (002) direction (located around 34.2°), excellent c-axis orientation, highly transparent with about 85% optical transmission in the visible spectrum 400-800nm, even over 90% at some waveband. They have excellent crystal structure, good crystallinity, and the grain size of the films was over 30 nm. Compared with ZnO thin films without annealing, the films annealed are better in crystallinity quality. It is a good candidate for transparent conductivity electrode of solar cells.