Abstract:The properties of bulk AlN crystals grown by sublimation recondensation and either randomly nucleated (i.e. self-seeded) or seeded on 6H-SiC substrates or compared. Self-seeding produces crystals of the highest perfection, lowest stress, and low Si and C impurity content, but the crystals grow in random crystallographic orientations. Crystals grown in boron nitride crucibles typically form thin platelets with the fastest growth occurring in the c-axis direction. Growth striations run the length of the crystals in the c-axis direction. Anisotropic etching in aqueous 45wt% KOH solutions shows that the growth (0001) planes exposed to the AlN source predominately have an aluminum polarity. AlN crystals seeded on 6H-SiC(0001) have a single crystallographic orientation and the largest dimensions are perpendicular to the c-axis, determined by the size of the substrate. Cracking and voids in the AlN layer produced by differences in thermal expansion coefficients of AlN and SiC and decomposition of the SiC were ameliorated by depositing an AlN–SiC alloy layer on the SiC before growing the AlN layer. Raman spectroscopy measurements suggest the AlN and AlN–SiC alloy layer are both under tensile stress. The defect density in AlN crystals grown on composite AlN–SiC/6H-SiC substrates was 3.7×105cm−2, as determined by synchrotron white beam X-ray topography.

Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Characterization of Aluminum Nitride Crystals Grown by Sublimation

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Crucible Materials for Growth of Aluminum Nitride Crystals

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Effect of Crystal Orientation on Self-Assembly Nanocones Formed on Tungsten Surface Induced by Helium Ion Irradiation and Annealing

Effect of Cr on solidification structure and microhardness of Al-Ni alloy

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Highly Crystalline Aln Particles Synthesized by Shs Method

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Design and Optimization of an Aluminum Nitride Sublimation Growth System

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology

Effect of nucleation sites on the growth and quality of single-crystal boron arsenide

Synthesize Of Aluminum Nitride Whiskers By Carbothermal Reduction