Effect of Crystallization Process on the Ferroelectric Properties of Sol-Gel Derived BiScO3–PbTiO3 Thin Films

Hai Wen,Xiaohui Wang,Xiangyun Deng,Tieyu Sun,Longtu Li

DOI: https://doi.org/10.1063/1.2404788

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:The dielectric and ferroelectric properties of sol-gel derived BiScO3–PbTiO3 thin films prepared by two different kinds of crystallization processes were studied. The film prepared by a single crystallization had a higher remanent polarization and dielectric constant than the one prepared by a multiple crystallization. The remanent polarization and dielectric constant were 50μC∕cm2 and 1609 for the single crystallization sample, and 40μC∕cm2 and 1429 for the multiple crystallization one. The investigation of the Rayleigh law revealed that the film prepared by a multiple crystallization, processed more irreversible domain wall motion contribution and less reversible contribution with respect to the one by a single crystallization. This was attributed to the layer-to-layer interfaces generated during the multiple crystallization processing, which acted as energy barrier and had a pinning effect on the domain wall motion, resulting more irreversible domain wall motion.