Effect of Different Sintering Temperatures on the Electrical Properties of SBTi Ferroelectric Ceramics

FAN Su-hua,ZHANG Feng-qing,HU Guang-da,YUE Xue-tao,XU Jing,ZHANG Wei
DOI: https://doi.org/10.3969/j.issn.1000-985x.2006.05.026
2006-01-01
Abstract:Bismuth-layered compound SrBi_(4)Ti_(4)O_(15)ferroelectric ceramics samples were prepared by Sol-gel method.The effect of different sintering temperatures(from 1000℃ to 1200℃) on the micro-configuration and the electrical properties of SrBi_4Ti_4O_(15) ferroelectric ceramics were studied.It is found that crystals developed entirely at 1100℃.At this sintering temperatures,the highest Curie temperature of the sample was 520℃,piezoelectric constant d_(33) was 9×10~(-12)C/N.The highest remnant polarization 2Pr and coercive field 2Ec were(2.1μC/cm~2) and(49.4kV/cm) respectively at 1100℃.These results can be explained as follows: bismuth in the pseudo-perovskite blocks formed deficient layer easily at higher sintering temperatures,that leaded to structure distortion and oxygen vacancies.
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