Abstract:They achieve a high‐quality NIR single‐mode lasing device in γ‐phase indium selenide (γ‐InSe) by using a transferable planar microcavity. The single‐mode lasing devices based on distributed Bragg reflectors microcavity can be simply prepared with quality factors up to 5710 (this is the highest Q value of any vdW layered material NIR lasing devices demonstrated so far). The on‐chip near‐infrared (NIR) lasing devices based on van der Waals (vdW) layered materials are highly desired owing to their widespread applications in optoelectronic communication, computing, and sensing. However, the single‐mode NIR lasing devices with superior performance based on vdW layered materials are hard to obtain because of complex and meticulous microcavity structure and the damage to layered materials during preparation. Here, a high‐quality NIR single‐mode lasing device in γ‐phase indium selenide (γ‐InSe) is achieved by using a transferrable planar microcavity. The single‐mode lasing devices based on distributed Bragg reflectors microcavity and super Tamm structure can be simply prepared with quality factors up to 5710 and 3526, respectively. And angle‐resolved spectra show that the lasing device has high directionality with divergence angle <5°. Moreover, the wavelength of lasing device can be tuned ≈30 nm by varying the cavity length via thickness control of γ‐InSe layer. These results not only suggest that γ‐InSe is a promising material for NIR lasing devices, but also present a simple and effective approach for preparing high‐quality lasing devices utilizing other vdW layered materials.

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Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

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Short cavity InGaN-based laser diodes with cavity length below 300 μm

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone