In_(0.75)Ga_(0.25)As on GaAs submicron rings and their application for coherent nanoelectronic devices

Franco Carillo,Giorgio Biasiol,Diego Frustaglia,Francesco Giazotto,Lucia Sorba,Fabio Beltram

DOI: https://doi.org/10.1016/j.physe.2005.12.013

2005-10-06

Abstract:Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200 nm without carrier depletion. We shall present a fabrication scheme based on wet and dry etching that yielded excellent reproducibility, very high contrast of the oscillations and good electrical gating. The operation of these structures is compatible with closed-cycle refrigeration and suggests that this process can yield coherent electronic circuits that do not require cryogenic liquids. The InGaAs/AlInAs heterostructure was grown by MBE on a GaAs substrate [1], and in light of the large effective g-factor and the absence of the Schottky barrier is a material system of interest for the investigation of spin-related effects [2-4]} and the realization of hybrid superconductor/semiconductor devices [5].

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the application of In\(_{0.75}\)Ga\(_{0.25}\)As in coherent nano - electronic devices by studying the electron - phase modulation in sub - micrometer rings (Aharonov - Bohm (AB) rings) on GaAs substrates. Specifically, the authors focus on the following aspects:

1. **Material characteristics**: Utilizing the zero - Schottky - barrier characteristic of In\(_{0.75}\)Ga\(_{0.25}\)As, nanostructures with a radius less than 200 nm can be fabricated without depleting carriers.

2. **Fabrication process**: A fabrication scheme based on wet and dry etching is proposed to achieve high reproducibility, high - contrast oscillation and good electrical gating performance.

3. **Device performance**: It is verified that these structures can work in a closed - cycle refrigeration system without the need for cryogenic liquids, thus providing the possibility for realizing coherent electronic circuits.

4. **Quantum interference effect**: The voltage - controlled interferometer is studied, and how to precisely control the conductance of the device by regulating the quantum phase of electrons through an electric field is explored.

### Key technical problems

- **Nanostructure fabrication**: How to fabricate nanostructures with smaller sizes while maintaining good electrical properties.
- **Coherent transmission**: Verify whether there is a significant coherent transmission phenomenon in In\(_{0.75}\)Ga\(_{0.25}\)As nanostructures at low temperatures (such as 250 mK).
- **Electrical gating**: Explore how to effectively control the carrier density and the phenomenon of conductance quantization through the side - gate voltage.
- **Quantum interference**: Study the possibility of regulating the electron phase through an electric field and verify its performance in devices of different sizes and geometries.

### Main conclusions

The paper demonstrates a highly reproducible fabrication process based on the In\(_{0.75}\)Ga\(_{0.25}\)As two - dimensional electron gas (2DEG), which can reliably produce ring - shaped structures with an average radius as small as 200 nm. In addition, effective electrical gating is achieved, which not only controls the carrier density but also induces the phenomenon of conductance quantization. Finally, a voltage - controlled electron interferometer is successfully demonstrated, and its feasibility in different device sizes and geometries is proved.

Through these studies, the authors lay the foundation for the future development of high - performance, low - temperature - operating coherent nano - electronic devices.