Abstract:To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants, SiO2/S coatings were-deposited on HP40 alloy specimens using dimethy1disulfide (DMDS) and tetraethoxysilane (TEOS) by atmospheric pressure chemical vapor deposition (APCVD). A two-dimension mathematical model was made to predict the growth rate Of SiO2/S coating and to study the effects of deposition parameters on the deposition rate. The results show that the predicted deposition rate is in good agreement with the experimental one. The deposition rate mainly depends on the concentrations of precursors in the total gas flow, concentrations of intermediates on the deposition surface, total gas flow rate and deposition temperature. The weight Of SiO2/S coating linearly increases with the deposition time. When the gas flow rate is below 0.3 m/s, the rate-limiting step of SiO2/S coating deposition is the diffusions of intermediates. However, the surface reactions of intermediates will be the rate-limiting step after the gas flow rate is above 0.3 m/s. When the deposition temperature is below 780 degrees C, the rate-limiting step Of SiO2/S coating deposition mainly depends on the surface reactions of intermediates. When the deposition temperature is above 780 degrees C, the rate-limiting step depends on the diffusions of intermediates. The deposition rate increases with increasing the concentrations of the intermediates. However, when the partial pressures of the intermediates reach 8 Pa, the deposition rate keeps constant.

Kinetic study of SiO2/S coating deposition by APCVD

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

Monomers effect on the gas and humid barrier properties in PECVD deposited SiOx film on PET surface

Numerical investigation of particle size distribution, particle transport and deposition in a modified chemical vapor deposition process

Modelling and Optimization for Deposition of SiO X N Y Films by Radio-Frequency Reactive Sputtering

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Chemical Vapor Deposition Of Silicon In A Lamp-Heated Reactor - Effects Of Heat Absorption, Emission, And Conduction

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Microstructure and Morphology of SiOx Film Deposited by APCVD

Analysis of the SiOx Film Microstructure on Al Substrate by APCVD Process

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Boundary layer chemistry probed by in situ infrared spectroscopy during SiO2 deposition at atmospheric pressure from tetraethylorthosilicate and ozone

Thermodynamic Analysis of Chemical Vapor Deposition Process for SiC/SiO2 Graded Composite Coating

High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system