Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

The impact of forming temperature on material and electrical characteristics of nickel silicide gate electrode

Thermal Stability of Electrical Characteristics of Nickel Silicide Metal Gate

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Improvement of Ni Silicide Thermal Stability by Using Vanadium Elements

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Study of nickel silicide formation on Si(1 1 0) substrate

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Ti-capping and heating ramp-rate effects on Ni-silicide film and interface

Study of Nickel Silicide Formation on Si(110) Substrate

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Properties of a Ni-FUSI Gate Formed by the EBV Method and One-Step RTA

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Ti-Capping Andheating Ramp-Rate Effects Onni-Silicide FilmandInterface