Structure and Electrical Properties of ZnTe: Cu Polycrystalline Thin Films

WU Xiao-li,ZHENG Jia-gui,HAO Rui-ying,FENG Liang-huan,CAI Wei,CAI Ya-ping,ZHANG Jing-quan,LI Bing,LI Wei,WU Li-li
DOI: https://doi.org/10.3969/j.issn.1007-4252.2007.06.027
2007-01-01
Abstract:ZnTe:Cu polyerystalline thin films prepared by vacuum co-evaporation technique were characterized by X-ray Diffraction(XRD),Atomic Force Microscope (AFM) and X-ray Photoelectron Spectroscope (XPS) measurements.The impact of copper-doping concentration and annealing temperature upon structure and surface morphology of ZnTe:Cu thin films were studied and elements existent states were analyzed.The abnormal ρ~T curve was explained based on changes of copper ions valence.And the optimum copper-doped concentration and annealing temperature were determined.
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