Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

Improved Program Mode for Memory Array Based on Ferroelectric-Gate Field-Effect Transistor

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

A Modified Macro Model of FEFET for FEDRAM Application

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

An efficient device model for ferroelectric thin-film transistors

A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Downsizing and Memory Array Integration of Pt/Srbi2ta2o9/Hf-Al-O/Si Ferroelectric-Gate Field-Effect Transistors

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Monte-Carlo Based Simulation Method for Ferroelectric Memory Devices Including Polarization Switching and Trap Behaviors

Logic Compatible High-Performance Ferroelectric Transistor Memory