5Gb/s monolithically integrated GaAs MSM/PHEMT 850nm optical receiver front end

Shilong Jiao,Tangsheng Chen,Feng Qian,Ou Feng,Youquan Jiang,FuXiao Li,Kai Shao,Yutang Ye
2007-01-01
Abstract:An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier. The photodetector has a photosensitive area and capacitance of 50μm × 50μm and 0.17pF, respectively, as well as a dark current of less than 17nA under a bias of 4V. The distributed amplifier has a - 3dB bandwidth close to 20GHz, with a transimpedance of 46dBΩ. In the range of 50MHz-16GHz, both the input and output voltage standing wave ratio are less than 2. The measured noise figure varies form 3.03 to 6.5dB. The output eye diagrams for 2.5Gb/s and 5Gb/s NRZ pseudorandom binary sequence are also obtained.
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