A Monolithically Integrated 850 nm Optical Receiver Front End

FENG Ou,FENG Zhong,YANG Lijie,JIAO Shilong,JIANG Youquan,CHEN Tangsheng,LI Fuxiao,YE Yutang
DOI: https://doi.org/10.3969/j.issn.1000-3819.2007.03.016
2007-01-01
Abstract:An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal (MSM) photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm2 and 0.15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ; The front end has a relatively clear output eye diagram for the 850 nm optical signd modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.
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