Design and Fabrication of Short Wavelength Monolithically Integrated Optical Receiver Front End

范超,陈堂胜,陈辰,焦世龙,陈镇龙,刘霖,王昱琳,叶玉堂
IF: 1.992
2008-01-01
Microelectronics Journal
Abstract:An 850 nm monolithically integrated optical receiver front-end, including PIN/TIA, PIN/DA, MSM/TIA and MSM/DA, was developed based on domestic material and technology.The photodiode and photo-detector circuit were studied and optimized, respectively.A photodiode model was established by using Silvaco software and verified by experimental data.The distributed amplifier achieved a -3 dB bandwidth of about 20 GHz and a transimpedance gain of 46 dBΩ.Both input and output voltage standing wave ratios (VSWR)were less than 2 and the noise figure (NF)varied from 3.03 dB to 6.5 dB.The transimpedance amplifier had a -3 dB bandwidth of about 10 GHz and a transimpedance gain of 43 dBΩ.The VSWR were less than 3.5 and NF varied from 3.03 dB to 6.5 dB.Eye diagrams of the optical receiver were measured at a bit rate up to 5 Gb/s.
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